Samsung Electronics Co., Ltd., a world-leading producer of advanced memory technology devices, is announcing that it has begun mass production of the industry’s first 256-gigabit three-dimensional (3D) Vertical NAND (V-NAND) flash memory. This 3D V-NAND is based on 48 layers of 3-bit multi-level cell (MLC) arrays for use in solid-state drives (SSDs). Samsung’s new 256Gb 3D V-NAND flash has double …
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