Tag Archives: MRAM

Aupera Technologies Inc. and Everspin Technologies are announcing Aupera’s Aup-AXL-M128, the world’s first M.2 storage module, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM.  Aupera’s Aup-AXL-M128 is currently being utilized in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require high performance and low latency. Everspin’s ST-MRAM technology combines high-performance, non-volatile DDR3 …

Everspin Technologies, the leading producer of MRAM technology and devices, is announcing that they have begun shipping the world’s first product utilizing perpendicular Magnetic Tunnel Junction (pMTJ)-based ST-MRAM  to customers.  Their 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market. Everspin’s successes now extend to its third generation MRAM technology, and they are preparing for …

Everspin Technologies is announcing that they have begun shipping 256Mb ST-MRAM samples to select global customers, enabling new storage solutions that use true MRAM-based Storage Class Memory (SCM).  Their new 256Mb ST-MRAM represents a new record for the highest density commercial MRAM currently available in today’s market.  Everspin, who is breaking their own previous record, is a consistent industry leader …

This week at AIS 2012, Everspin Technologies announced commercial production of the first ever Spin-Torque Magnetoresistive RAM (ST-MRAM). This new type of ultra-low latency and high-performance memory is expected to transform storage architecture, while driving the continuous evolution of Moore’s Law.  Sampling has already begun with select customers, and Everspin is engaging strategic partners to prepare design and manufacturing ecosystems. …

Researchers at the University of California, San Diego (UCSD), have announced that SSDs only have about a decade of life left before they become impractical from a functional standpoint. The researchers have stated that as flash memory shrinks, read and write latency, not to mention cumulative bit errors increase. Apparently, one of the team members wrote a paper which asserted that the …

Everspin Technolgies is reporting record growth for 2011, with MRAM product shipments increasing over 300% from the prior year. The MRAM pioneer continues to shape the market for magnetic memories; gaining further momentum with over 250 design wins in the past year. Everspins patented MRAM technology is based on a magnetic tunnel junction (MTJ) storage element that is deposited on …