Tag Archives: 24nm SLC NAND

Toshiba is expanding their portfolio of 24nm single-level cell (SLC) NAND flash memory to include a new 16 gigabit (Gb) BENAND™ module.  The new version is housed in an industry-standard 48-pin TSOP package, and provides  high read/write performance, superior write endurance (with 8-bit BCH error correction code), as well as an extended range of operating temperatures, making it an excellent …

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