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Samsung Electronics Co. Ltd., A global force in NAND technology, is announcing mass production of a 128Gb, 3-bit multi-level-cell (MLC) NAND chip. Now breaking the 20nm barrier, this new architecture is classified as 10 nanometer (nm)-class process technology. These advanced, high density memory chips will enable even larger capacities for embedded NAND storage, and especially for solid state drives (SSDs).
Samsung;s 128Gb NAND Flash module, based on 3-bit multi-level-cell design, gives them the industry-leading highest density. It will also give Samsung their highest performance level of 400 MB/s data transfer rate, based on its toggle DDR2.0 interface. Demand continues to grow rapidly for high-performance 3-bit MLC NAND Flash and single chips with 128Gb storage capacities. This has increased adoption of SSDs with storage capacities of 250GB or more, the Samsung SSD 840 series being a prime example.
Embracing the 128Gb NAND Flash, Samsung intends to expand it supply of 128Gb memory cards, with each able to store up to sixteen full HD video files as large as 8GB. Samsung will also increase production of SSDs with densities over 500GB. Not only will this make a big push into wider adoption of SSDs in computer systems, but will also accelerate the move away from HDDs and SSD/HDD-hybrids to solely SSDs as the primary storage drives for the notebook market.
According to Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics, “By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs. The new chip is a critical product in the evolution of NAND Flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market.”
Samsung is steadily solidifying their position as a force to be reckoned with in the SSD industry. “Owning the fab” certainly enhances their ability to continue to be aggressive in their pricing philosophies. The only thing better than “owning the fab” would be owning the best fab in the industry.
TLC plus 128gbit is going to be to slow below 250gb
You’re using abbreviation GB wrong. Samsung announced 128-gigabit module, not 128-gigabyte.
Doooh…Corrected tx!
I don’t want to be some sort of abbreviation nazi, but I think news site of TSSDR caliber should be accurate. Heading is still wrong 🙂
Gbps = gigabits per second, and seconds have nothing to do here. There’s also wrong “128GB” (must be “128Gb”) all over the post’s text. Since all letters in the title must be uppercase, I suggest this:
“SAMSUNG BEGINS MASS PRODUCTION OF 128-GIGABIT MLC NAND CHIPS USING SUB-20 NM ARCHITECTURE”
Title is fine and thanks for the 128GB Anton.
I’m with you on this one, Anton!