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Samsung Electronics Company, Ltd., a global leader in memory technology, has announced the introduction of the world’s first solid state drive (SSD) based on their new 3D V-NAND technology. The new V-NAND SSD is targeted toward enterprise server and data center usage scenarios, and was revealed during a keynote presentation at the Flash Memory Summit 2013 in San Jose, California.
Samsung’s new proprietary 3D V-NAND technology is able to attain more than double the manufacturing productivity of prior 20nm-class two-dimensional NAND flash. This is achieved by utilizing cylindrical 3D Charge Trap Flash cell structures with vertical interconnects that link together the 24 layers that comprise the 3D cell array. Samsung indicated that it began producing the new V-NAND SSDs earlier this month.
Samsung’s V-NAND SSD will be available in capacities of either 480GB or 960GB, with the 960GB version attaining the highest level of performance. By making use of 64 individual dies of MLC 3D V-NAND flash, each with 128 Gb (gigabits) of storage, combined with a 6 GB/s SATA interface controller, the V-NAND SSD achieves more than a 20% increase in random write speeds. The Samsung V-NAND SSDs also claim 35,000 program erase cycles, and will be available in 2.5″ form factor versions with x, y, or z-heights of 10cm, 7cm, and 7mm respectively. The multiple size choices will give server manufacturers much more flexibility and scalability in their server designs.
According to E. S. Jung, executive vice president of the semiconductor R & D center at Samsung Electronics (and a keynote speaker at Flash Memory Summit 2013), “By applying our 3D V-NAND — which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption. As we pioneer a new era of memory technology, we will continue to introduce differentiated green memory products and solutions for server, mobile and PC markets to help reduce energy waste and to create greater shared value in the enterprise and for consumers. The 3D V-NAND will drive disruptive innovation that can be compared to a Digital Big Bang in the global IT industry, and contribute to much more significant growth in the memory market.”
Samsung has indicated that they will continue to introduce next-generation V-NAND products with increased performance to meet a variety of customer needs for NAND flash-based storage devices. These will range from larger data center users, who can realize a higher return on investment based on greater performance and energy efficiency, to PC usage scenarios that place high priority on high density and cost-effectiveness. Samsung is once again poised to further strengthen their business competitiveness, and help drive the storage industry as it continues to expand at an amazing rate.
